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DISCRETE SEMICONDUCTORS
DATA SHEET
BLU20/12 UHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile * gold metallization ensures excellent reliability. * internal matching to achieve an optimum wideband capability and high power gain.
BLU20/12
The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange.
QUICK REFERENCE DATA Envelope Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature SOT-119 class-B; c.w. VCE f PL GP c Th > > 12,5 V 470 MHz 20 W 6,5 dB 55 % 25 C
PIN CONFIGURATION
PINNING PIN 1 DESCRIPTION emitter emitter base collector emitter emitter
handbook, halfpage
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134). Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 25 C f > 1 MHz; Tmb = 25 C Storage temperature Operating junction temperature Ptot (d.c.) Ptot (r.f.) Tstg Tj max. max. max. IC ICM max. max. VCBOM VCEO VEBO max. max. max.
BLU20/12
36 V 16,5 V 4V 4A 12 A 38 W 44 W 200 C
-65 to + 150 C
handbook, halfpage
10
MDA313
handbook, halfpage
80
MDA314
Ptot (W) IC (A) Th = 70 C Tmb = 25 C 60 III
1
40
II I
20
10-1
1
10
VCE (V)
102 I
0 0 40 80 120 Th (C) 160
Continuous operation
Rth mb-h = 0,2 K/W
II Continuous operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz)
Fig.2 D.C. SOAR.
Fig.3 Power/temperature derating curves
THERMAL RESISTANCE (dissipation = 37 W; Tmb = 25 C, i.e. Th = 18 C) From junction to mounting base (d.c. dissipation) (r.f. dissipation) From mounting base to heatsink August 1986 3 Rth j-mb(d.c.) Rth j-mb(r.f.) Rth mb-h max max max 4,6 K/W 4,1 K/W 0,2 K/W
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-base breakdown voltage IC = 25 mA; open emitter Collector-emitter breakdown voltage IC = 50 mA; open base Emitter-base breakdown voltage IE = 5 mA; open collector Collector cut-off current VBE = 0; VCE = 20 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 D.C. current gain IC = 2,7 A; VCE = 10 V Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-flange capacitance Cre Ccf CC hFE > ESBR > ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO >
BLU20/12
36 V 16,5 V 4V 12,5 mA 5,3 mJ 15 60 53 pF 33 pF 3 pF
typ. typ. typ. typ.
handbook, halfpage
80
MDA315
handbook, halfpage
160
MDA316
hFE 60
VCE = 12.5 V 10 V
Cc (pF) 120
40
80
20
40
0 0 2 4 6 8 IC (A) 10
0 0 4 8 12 VCB (V) 16
Fig.4 Tj = 25 C; typ. values.
Fig.5 IE = Ie = 0; f = 1 MHz; typ. values.
August 1986
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature
BLU20/12
in narrow band test circuit; class-B; c.w. VCE f PL Gp c Th > typ. > typ. 12,5 V 470 MHz 20 W 6,5 dB 7,8 dB 55 % 64 % 25 C
handbook, full pagewidth
R2
C5 L7 +VCC
50
C1
,,,, ,,,, ,,,,,,, ,,,, ,,, ,,,,,,, ,,,, ,,,
L8 R1 C6 C10 L2 C3 L5 T.U.T. L1 L3 L4 L6 C2 C4
C7 50 C9
C8
MDA317
Fig.6 Class-B test circuit at f = 470 MHz.
August 1986
5
Philips Semiconductors
Product specification
UHF power transistor
List of components: C1 = C9 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C2 = 2 to 9 pF film dielectric trimmer (cat.no. 2222 809 09002) C3 = C4 = 8,2 pF multilayer ceramic chip capacitor (100A type) (1) C5 = 100 nF polyester film capacitor C6 = 120 pF multilayer ceramic chip capacitor C7 = 8,2 pF multilayer ceramic chip capacitor (100B type) (1) C8 = 2 to 18 pF film dielectric trimmer (cat.no. 2222 809 09003) C10 = 2,2 F electrolytic capacitor L1 = 50 stripline (43,5 mm x 4,0 mm) L2 = 100 nH; 5 turns closely wound enamelled Cu-wire (0,5 mm); int. diam. 4 mm; leads 2 x 5 mm L3 = 37,6 stripline (8,0 mm x 6,0 mm) L4 = 37,6 stripline (9,0 mm x 6,0 mm) L5 = 74,4 stripline (22,5 mm x 2,0 mm) L6 = 37,6 stripline (18,0 mm x 6,0 mm) L7 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat.no. 4312 020 36642) R1 = 1 5%; 0,4 W metal film resistor (MR25 type) R2 = 10 5%; 0,4 W metal film resistor (MR25 type)
BLU20/12
L1, L3, L4, L5 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (r = 2,74); thickness 1/16 inch. Note 1. American Technical Ceramics capacitor or capacitor of same quality.
August 1986
6
Philips Semiconductors
Product specification
UHF power transistor
BLU20/12
116
handbook, full pagewidth
70
rivets
Fig.7 P.C. board for 470 MHz, class-B test circuit.
R2
C5
VCC L7 C10
C6 L8 R1 L2 C1 L1 E C3 L3 C4 B E C L4 E C8 rivets E C7 L6 C9 L5
C2
MDA318
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as groundplane. Earth connections are made by hollow rivets and also by copper straps under the emitters and around the board to provide a direct contact between the copper on the component side and the ground plane. Dimensions in mm.
Fig.8 Component lay-out of 470 MHz, class-B test circuit.
August 1986
7
Philips Semiconductors
Product specification
UHF power transistor
BLU20/12
handbook, halfpage
40
MDA319
handbook, halfpage
PL (W) 30
10 Gp (dB) 8
MDA320
Gp
100 C (%) 80 Th = 25 C
Th = 25 C
70 C 20
6 C
70 C
60
4
40
10
2
20
0 0 2 4 6 8 10 PS (W)
0 1 10 20 30 PL (W)
0 40
VCE = 12,5 V; f = 470 MHz; class-B operation; Th = 25 C and 70 C; Rth mb-h = 0,2 K/W; typical values.
VCE = 12,5 V; f = 470 MHz; class-B operation; Th = 25 C and 70 C; Rth mb-h = 0,2 K/W; typical values.
Fig.9 Load power vs. source power.
Fig.10 Power gain and efficiency vs. load power.
RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) up to 25 W under the following conditions: VCE = 15,5 V; f = 470 MHz; Th = 25 C; Rth mb-h = 0,2 K/W.
August 1986
8
Philips Semiconductors
Product specification
UHF power transistor
BLU20/12
handbook, halfpage
4
MDA321
handbook, halfpage
5
MDA322
Zi () 3
ri
ZL () 3
RL
xi
2
1
1
-1 XL -3 400
0 400
430
460
490
f (MHz)
520
430
460
490
f (MHz)
520
VCE = 12,5 V; PL = 20 W; f = 400 - 512 MHz; Th = 25 C; class-B operation; Rth mb-h = 0,2 K/W; typical values.
VCE = 12,5 V; PL = 20 W; f = 400 - 512 MHz; Th = 25 C; class-B operation; Rth mb-h = 0,2 K/W; typical values.
Fig.11 Input impedance (series components).
Fig.12 Load impedance (series components).
handbook, halfpage
10 Gp (dB) 8
MDA323
6
4
2
0 400
430
460
490
f (MHz)
520
VCE = 12,5 V; PL = 20 W; f = 400 - 512 MHz; Th = 25 C; class-B operation; Rth mb-h = 0,2 K/W; typical values.
Fig.13 Power gain versus frequency.
August 1986
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLU20/12
SOT119A
A F q
C
U1 H1 b2
B w2 M C c
2
4
6
H
U2
p
D1 w1 M A B
U3
D
A
1
b1
3
b e
5
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c D D1 e F H H1 p Q q U1 U2 U3 w1 w2 1.02 0.04 w3 0.26 0.01
0.18 12.86 12.83 6.48 0.07 12.59 12.57
2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97
4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06
0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475
OUTLINE VERSION SOT119A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLU20/12
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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